Researchers at École Polytechnique Fédérale de Lausanne (EPFL) and Center Suisse d’Electronique et de Microtechnique (CSEM) in Switzerland developed a novel single-step thermal annealing process for ...
A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...
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