A research team led by Prof. LIU Zhiqiang from the Institute of Semiconductors of the Chinese Academy of Sciences, in cooperation with the team led by Prof. GAO Peng from Peking University and the ...

Helios will be leveraging Galaxy's Hyperdrive platform to provide epitaxy tool owners with unprecedented data insights and tool optimization capabilities. Together, we are empowering semiconductor ...

In a study published in Journal of the American Chemical Society, a team led by Prof. Song Li from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences ...

The direct band gap of AlN-based materials makes them suitable for fabricating DUV optoelectronic devices, which have a wide range of application prospects in the fields of curing, water and air ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

Molecular beam epitaxy (MBE) is a precision epitaxial growth technique that permits atomic‐scale tailoring of semiconductor structures. By directing beams of elemental or compound sources onto heated ...

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing the need for crystalline substrates in epitaxy (Nanowerk Spotlight) The ...

Remote epitaxy, a promising technology for thin film growth and exfoliation, suffers from substrate damage under harsh conditions. In this regard, researchers recently investigated the effect of ...

(Nanowerk News) A research team led by Prof. LIU Zhiqiang from the Institute of Semiconductors of the Chinese Academy of Sciences, in cooperation with the team led by Prof. GAO Peng from Peking ...