Business Wire

GLOBALFOUNDRIES Unveils FinFET Transistor Architecture Optimized for Next-Generation Mobile Devices

MILPITAS, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM ...
SiliconANGLE

Samsung starts producing 3-nanometer chips based on new transistor technology

In a major industry milestone, Samsung Electronics Co. Ltd. today announced that it has begun producing chips using its latest three-nanometer semiconductor manufacturing process. The process will ...
Computerworld

TSMC to unveil 20nm chips with FinFET transistors at IEDM

Taiwan Semiconductor Manufacturing Company (TSMC) may be showing off its vision for the future of chip manufacturing technologies beyond 20 nanometers when it unveils its latest research into FinFET ...
EDN

14nm-XM FifFet Transistors

GlobalFoundries today accelerated its roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM offering will give customers the performance and power ...
EDN

All you need to know about GAA chip manufacturing process

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
NextBigFuture

Samsung Versus TSMC Versus Intel

TSMC 3nm process node is the best FinFET technology and TSMC dominates semiconductor chip fabrication with higher transistor density, better yields on a mature technology and broad adoption by clients ...
Business Wire

GLOBALFOUNDRIES Launches Industry’s First 22nm FD-SOI Technology Platform

While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost. 22FDX provides ...
Seeking Alpha

Denton's Ion Beam Deposition Technology Will Challenge Applied Materials' Overengineered ALD System

Logic semiconductor manufacturers plan to replace FinFET devices with Gate All Around at sub-3nm nodes. Applied Materials has introduced a complex seven chamber system with Atomic Layer Deposition as ...
Semiconductor Engineering

Stress-Related Local Layout Effects In FinFET Technology And Device Design Sensitivity

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
ExtremeTech

TSMC Says it Will Move to Nanosheet Transistors at 2nm

We're about to enter a very unique era in the world of silicon fabrication. The currently-used FinFET transistors have been in use since 2011, but as nodes continue to shrink they will need to be ...
Forbes

Intel Reports Good Progress On Intel 4 Process Node At IEEE Symposium

This week, Intel presents five papers at the 2022 IEEE Symposium on VLSI Technology & Circuits (VLSI) that describe the company’s progress on Intel 4, the semiconductor process technology formerly ...
Semiconductor Engineering

How To Get The Most Out Of Gate-All-Around Designs

To achieve the power, performance, and area (PPA) advantages dictated by Moore’s law, transistors have evolved substantially over the years. The development of planar transistors at Fairchild ...