PORTLAND, Ore. — IBM Research claims to have fabricated the world's smallest SRAM bit cell with joint industry and university development partners. The SRAM bit cell, which was cast using 22 nanometer ...

SUNNYVALE, Calif. — MoSys Inc. today announced it has extended its collaboration with Taiwan Semiconductor Manufacturing Co. Ltd. to include the company's one-transistor SRAM cell technology in TSMC's ...

SUNNYVALE, CALIFORNIA and HSINCHU, TAIWAN (March 29, 2002) - MoSys (NASDAQ:MOSY) and Taiwan Semiconductor Manufacturing Company (NYSE:TSM) today extended their long-standing 1T-SRAM ® collaboration ...

The Crolles2 Alliance, which includes Freescale Semiconductor, Philips and STMicroelectronics, has created six-transistor SRAM-bit cells with an area of less than 0.25 square microns, or about half ...

This paper presents a Seven-transistor SRAM cell intended for the advanced microprocessor. A low power write scheme, which reduces SRAM power by using seven-transistor sense-amplifying memory cell, ...

Static Random-Access Memory (SRAM) has been a key element for logic circuitry since the early age of the semiconductor industry. The SRAM cell usually consists of six transistors connected to each ...

The scaling of the 6T SRAM cell is slowing and the surrounding circuitry is getting more complex, so more of the die will be taken up by SRAM at future nodes. The six-transistor static memory cell ...

For applications where performance is of primary importance, designers have traditionally chosen SRAM technology over DRAM. Although commodity DRAM offers much higher density and a lower cost per bit, ...